Electronic Buyers' News meldt dat Samsung op het Intel Developer Forum de beschikbaarheid van 288Mbit Rambus samples heeft aangekondigd. De levering van de nieuwe high-density chips volgt in de komende herfst. Op een double-sided module kunnen de chips gecombineerd worden tot een 288MB of 576MB RIMM. Samsung verwacht dat de produktie van Rambus en DDR chips volgend jaar elk ongeveer 15% van Samsung's totale geheugen capaciteit weg zal eten:
The U.S. subsidiary of Samsung Electronics Co. Ltd. said the new higher density chips can be mounted double-sided in a module, offering 288-Mbyte or 576-Mbyte RIMMs. Thus, a single-channel Rambus memory would have a 1-Gbyte capacity and a two-channel memory 2 Gbytes.Bob Eminian, vice president of marketing for Samsung Semiconductor, said he expected Direct RDRAM to comprise about 15% of Samsung's DRAM unit shipments next year -- out of a total 300 million devices shipped by the market.
Samsung is also maintaining a strong position in PC133 SDRAMs and double-data-rate (DDR) SDRAMs. Eminian estimated DDR will also ramp up in 2001 to about 15% of Samsung's DRAM unit shipments.