Fujitsu schrijft in een press release dat ze samples hebben gebakken van Fast Cycle RAM met een DDR interface. Het geheugen komt in verschillende snelheden, van 167 Mhz tot 200 Mhz en heeft een write latency van 1 :
Tokyo, January 18, 2000---Fujitsu Limited and Fujitsu Microelectronics, Inc. (FMI) today introduced samples of the company's new 64 Megabit Fast Cycle RAM (FCRAM™) with Double Data Rate (DDR) SDRAM interface. Designed for graphics and multimedia applications, the FCRAM features high speeds and low power consumption.
The 64 Megabit FCRAM with DDR interface is the first in a series of Application Specific Memory (ASM) products based on the FCRAM architecture, which was introduced in June 1998 at the VLSI Symposium as Fujitsu's next generation of high-speed memory technology. The new ASMs announced today feature a 200 MHz clock speed, DLL controlled output, and a 400 Megabit/second/pin data transfer rate. All versions use page mode operation. Random access speeds are very high, with the fastest random cycle time measured at 30 nanoseconds.
"Fujitsu expects that the FCRAM technology will make a significant design contribution to a wide range of applications," said Ryusuke Hoshikawa, chairman of FMI. "The FCRAM products introduced today provide high-speed random access capabilities by combining the FCRAM core with the high-speed data transfer rate provided by DDR. This version is ideal for graphic and imaging buffer memory implementations such as are required for digital TVs, set-top boxes and similar applications. Future versions will expand our base of applications."
Dit geheugen moet ideaal zijn voor de steeds snellere videokaarten, die steeds meer last krijgen van te sloom geheugen (GeForce). Volgens geruchten krijgen de opvolgers van de G400 van matrox, de G450 en G800 misschien wel dit geheugen.