EBN Online meldt dat de Taiwanese chipbakker Nanya heeft aangekondigd in het derde kwartaal van dit jaar te zullen beginnen met het samplen van 256 Mbit DDR SDRAMs. 128 Mbit DDR samples volgen in het vierde kwartaal. De doelstelling van Nanya is om eind dit jaar tot de top 10 van de wereldwijde DRAM suppliers te behoren:
Ken Hurley, president of Nanya North America, San Jose, said DDR and single-data-rate versions of the higher-density SDRAMs will be produced on the company's 0.175-micron process technology being installed in its fab at Linhoa, Taiwan.[...] Nanya this quarter has started shipping 64-Mbit SDRAMs produced on its 0.2-micron process at its re-equipped fab in Taoyuan, Taiwan. The plant is capable of producing 30,000 8-in. wafers a month. The fab in Linhoa, when it comes on line late this year, will ramp up to 17,000 wafers monthly in December and 25,000 wafers monthly in March 2001. Ultimately, the Linhoa fab will have capacity for 30,000 monthly wafer starts.