Micron heeft aangekondigd dat het begint met de levering van snelle low-latency 133MHz CAS2 registered en unbuffered DIMMs. De modules zijn beschikbaar in smaken van 32 tot 512MB:
Micron Technology, Inc., today announced samples of industry standard 133MHz 2-2-2 synchronous DRAM (SDRAM) registered and unbuffered DIMM modules in densities ranging from 32MB to 512MB. Micron is also accepting orders for production volumes of 133MHz 2-2-2 SDRAM components and associated modules.
[...] The most noticeable improvement with 133MHz 2-2-2 SDRAMs over 133MHz 3-3-3 SDRAMs is the lead-off latency. "Although both speed options provide the same peak burst rate, PC133 2-2-2 offers a lead-off latency of only 30 nanoseconds," said Chris Johnson, Micron SDRAM Applications Engineer. "This is a 34 percent improvement over the 45 nanosecond lead-off latency available from PC133 3-3-3 SDRAM and is the fastest lead-off latency in high-volume DRAMs available today." In various benchmarking suites, performance improvement is readily seen when converting from PC133 3-3-3 to PC133 2-2-2 SDRAMs. WinStone 99 shows a 1 to 2 percent improvement, SiSoft Sandra shows a 10 to 20 percent improvement, and 3DMark 2000 shows a 3 to 6.5 percent improvement.
Micron is the first DRAM manufacturer to meet the Intel 133MHz SDRAM device specification target goal of 2-2-2. The 2-2-2 reference refers to the following timing specifications, in clock cycles: CAS latency (CL), which is the time from read command to data out; RAS to CAS delay (tRCD), which is the time from the active command to the read command; and the RAS precharge (tRP), which is the time from precharge command to active command. 133MHz SDRAM parts meeting the 2-2-2 specification provide data faster than parts meeting the 3-3-3 specification, which is the slowest option supported by the Intel 133MHz SDRAM device specification.