Winbond is er met succes in geslaagd om 256Mbit DRAM chips te fabriceren op een nieuw 0,175micron proces. De huidige 0,20micron produktielijnen voor 64, 128 en 256Mbit chips zullen binnenkort overgezet worden naar dit nieuwe proces (thanks insane voor de tip):
Winbond Electronics Corporation, the largest branded IC company in Taiwan, today announced that it has achieved a new process technology milestone -- the successful ramp-up of its 0.175-micron technology for 256Mb DRAM products. The announcement comes in anticipation of the semiconductor boom widely forecasted by analysts for the new millennium
In mid-1999, Winbond achieved manufacturing capability for 0.2-micron 128Mb DRAM technology. Last month, the Company successfully staged the pilot production of the first 256Mb DRAM using 0.175-micron technology. Yield rates were satisfactory and initial performance results were far better than initially expected.
Winbond's main products, 64Mb and 128Mb DRAMs, are currently manufactured using 0.2-micron technology in Winbond's Fab 4 and Fab 5 facilities located at the Science Based Industrial Park in Hsinchu, Taiwan. The Company plans to migrate all of its 64Mb, 128Mb and 256Mb DRAM production to 0.175-micron by early 2000. By the end of 2000, the Company expects that the output of DRAMs will increase from 22,000 to 30,000 wafers a month, an increase of 36 percent.