Wetenschappers van de University of California in Berkeley hebben een doorbraak bereikt in het onderzoek naar een nieuw type halfgeleider, waarmee 400 keer zoveel transistors op dezelfde oppervlakte geplaatst kunnen worden als met huidige technieken:
Chenming Hu, a professor electrical engineering and computer sciences at the University of California, Berkeley, said the tiny transistor was much smaller than any other ever developed.[...] The Berkeley breakthrough, announced in a news release, changed the design of the "gate", or switch, on the transistor which controls the flow of electric current in electronic devices.
While previously this gate was a flat conductor that controlled only one side of the passage through which the current flows, the Berkeley team has redesigned it as a fork-shaped prong straddling both sides of the passage.
This gives much better control and reduced current leakage, meaning the transistor can be made much smaller.
Hu said the FinFET's gate is 18 nanometers long, or about the width of 100 atoms. While far too small to be viewed by the naked eye, it is visible through a scanning electron microscope.
Check ZDNet voor het volledite nieuwsartikel.
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