Yahoo meldt dat AMD nieuw burst mode flash geheugen heeft aangekondigd onder de naam Am29BDS643. Dit geheugen draait op 1,8V, beschikt 64MB aan opslagcapaciteit en werkt op 66MHz. De Am29BDS643 maakt gebruik van Advanced Micro Devices Simultaneous Read/Write architecture waarmee een burst access time van 11 nanoseconden wordt gerealiseerd. De modules worden gemaakt volgens het 0,17 micron procedé en zijn direct beschikbaar voor een prijs van 19,5 dollar (prijs per duizend). Hieronder een gedeelte uit het artikel:
The device uses AMD's Super Low Voltage technology, which provides single 1.8 volt read, program, and erase capability. AMD was the first to offer 1.8 volt flash memory devices, enabled by AMD's patented negative gate erase architecture. Like all of AMD's low voltage Flash memory devices, the Am29BDS643 automatically enters into a power-saving ``sleep mode'' while not in use. When it is next needed the device returns instantaneously to an active state. To further reduce power consumption the Am29BDS643 uses an innovative power saving pin. This pin limits the number of power- consuming switching operations during read to help maximize the system's battery life.
AMD's Am29BDS643 offers high performance 11 nanosecond burst mode read, 55 nanosecond asynchronous read, and supports 66 MHz microprocessors. It is a 1.8 volt-only, x16, 64 Megabit Flash memory device manufactured on AMD's advanced 0.17-micron process technology.
The device offers true hardware simultaneous read/write with flexible bank architecture, which enables storage of code and data on the same device. The Am29BDS643 has four 16Mb banks. The system is able to simultaneously program and erase in one bank while reading data from any one of the other banks. As a result, system designers can combine the functionality of several memory devices into one and reduce component costs.