Electic Tech schrijft dat Samsung een techniek heeft ontwikkeld waarmee het mogelijk is om chippies te maken op 0.10 micron. Dit betekend dat het mogelijk wordt om betaalbare geheugen chippies te maken waar een gigabit op past, meer dan 100 megabyte dus :
Reaching below the semiconductor circuit design rule of ten microns has long been considered beyond the realm of technological possibility. However, Samsung Electronics has developed a new photoresistance technology, used in lithography, that can break that formidable barrier. Until now, manufacturing technology and tools for argon fluoride (ArF), a light source for forming the minute circuits needed to commercialize devices with a memory capacity of one gigabit or more, has been developed.
However, the photoresistance technology has not been able to satisfy requirements for high definition and etching resistance at the same time. Commercialization of 0.10-micron circuit devices has been made difficult by the Post Exposure Delay(PED) properties that alter the circuit patterns.
The new ArF photoresistance technology developed by Samsung Electronics simultaneously delivers outstanding definition and etching resistance as well as improved PED (Post Exposure Delay) properties. As a result, this substance will enable the rapid commercialization of next-generation technology.